I-Sapphire Substrate
Incazelo
I-Sapphire (Al2O3) ikristalu eyodwa iyinto enhle kakhulu enemisebenzi eminingi.Inokumelana nokushisa okuphezulu, ukushisa okuhle, ukuqina okuphezulu, ukudluliswa kwe-infrared kanye nokuzinza okuhle kwamakhemikhali.Isetshenziswa kabanzi emikhakheni eminingi yezimboni, ezokuvikela kazwelonke kanye nocwaningo lwesayensi (njengewindi le-infrared lokushisa eliphezulu).Ngasikhathi sinye, futhi iwuhlobo lwezinto ezisetshenziswa kabanzi ze-crystal substrate eyodwa.Yindawo yokuqala ekhethwayo yokuqala embonini yamanje eluhlaza okwesibhakabhaka, e-violet, emhlophe ekhipha ukukhanya okukhanyayo (i-LED) kanye ne-blue laser (LD) (ifilimu ye-gallium nitride kumele ibe yi-epitaxial ku-sapphire substrate kuqala), futhi iyi-superconducting ebalulekile. ifilimu substrate.Ngaphezu kwe-Y-system, i-La system namanye amafilimu ashisa kakhulu izinga lokushisa, ingasetshenziswa futhi ukukhulisa amafilimu amasha asebenzayo e-MgB2 (magnesium diboride) (imvamisa i-single-crystal substrate izogqwala ngamakhemikhali ngesikhathi kwakhiwa i-MgB2. amafilimu).
Izakhiwo
| I-Crystal Purity | > 99.99% |
| I-Melt Point (℃) | 2040 |
| Ukuminyana (g/cm3） | 3.98 |
| Ukuqina (Mho) | 9 |
| Ukunwetshwa kwe-Thermal | 7.5 (x10-6/oC) |
| Ukushisa Okuthize | 0.10 ( cal /oC) |
| I-Thermal Conductivity | 46.06 @ 0oC 25.12 @ 100oC, 12.56 @ 400oC ( W/(mK) ) |
| I-Dielectric Constant | ~ 9.4 @300K eksisi ye-A ~ 11.58@ 300K ku-axis ye-C |
| I-Loss Tangent ku-10 GHz | <2x10-5ku-Axis , <5 x10-5ekseni C |
Incazelo yeSapphire Substrate
I-Sapphire substrate isho into ekhanyayo yekristalu eyenziwe nge-crystal aluminium oxide eyodwa (Al2O3).Igama elithi "sapphire" livame ukusetshenziselwa ukuchaza izinhlobonhlobo zamatshe ayigugu e-corundum, ngokuvamile anombala oluhlaza okwesibhakabhaka.Kodwa-ke, ngokuya ngama-substrates, isafire isho ikristalu ekhule ngokuzenzela, engenambala, ehlanzekile kakhulu esetshenziswa emisebenzini ehlukahlukene.Nawa amanye amaphuzu abalulekile mayelana ne-sapphire substrates:
1. Ukwakheka kwekristalu: Isafire ine-hexagonal crystal structure lapho ama-athomu e-aluminium nama-athomu omoya-mpilo ahlelwa ngokuphindaphindiwe.Iyingxenye ye-trigonal crystal system.
2. Ukuqina okuphezulu: I-Sapphire ingenye yezinto eziqine kakhulu ezaziwayo, enobulukhuni be-Mohs obungu-9. Lokhu kuyenza imelane nokuklwebheka, okunomthelela ekuqineni kwayo nasekuphileni isikhathi eside ekusetshenzisweni.
3. Ukudlulisa ukukhanya: I-Sapphire inokudlulisa ukukhanya okuhle kakhulu, ikakhulukazi ezindaweni ezibonakalayo neziseduze ne-infrared.Ingakwazi ukudlulisa ukukhanya kusuka cishe ku-180 nm kuya ku-5500 nm, ikwenze ifaneleke uhla olubanzi lwezinhlelo zokusebenza ze-optical ne-optoelectronic.
4. Izakhiwo ezishisayo nezemishini: Isafire inezinto ezinhle ezishisayo nezisebenza ngomshini, indawo ephezulu yokuncibilika, i-coefficient ephansi yokwandisa okushisayo, kanye ne-thermal conductivity enhle kakhulu.Ingakwazi ukumelana namazinga okushisa aphezulu, ukucindezeleka kwemishini kanye nokuhamba ngebhayisikili okushisayo, okwenza ifanele izinga lokushisa eliphezulu kanye nezicelo zamandla aphezulu.
5. Ukuzinza kwamakhemikhali: Isafire inokuqina okuphezulu kwamakhemikhali futhi ingamelana nama-asidi amaningi, ama-alkali nezincibilikisi zemvelo.Lesi sici siqinisekisa ukuqina nokuthembeka kwaso ezindaweni ezihlukahlukene ezinokhahlo.
6. Izakhiwo zokuvikela ugesi: I-Sapphire iyisivikeli esingcono kakhulu sikagesi, esizuzisa izinhlelo zokusebenza ezidinga ukuhlukaniswa kukagesi noma ukwahlukanisa.
7. Isicelo: Ama-substrates e-Sapphire asetshenziswa kakhulu kuma-optoelectronics, ama-semiconductors, ama-light-emitting diode, ama-laser diode, amafasitela abonakalayo, amakristalu ewashi kanye nocwaningo lwesayensi.
Ama-substrates e-Sapphire aziswa kakhulu ngokuhlanganiswa kwawo kwezakhiwo ze-optical, mechanical, thermal kanye namakhemikhali.Izakhiwo zayo ezibonakalayo ezivelele ziyenza ifanelekele izinhlelo zokusebenza ezidinga ukuqina okuphezulu, ukucaca okuphezulu kwe-optical, ukufakwa kukagesi kanye nokumelana nezakhi zemvelo.
