I-SiC Substrate
Incazelo
I-Silicon carbide (SiC) iyinhlanganisela kanambambili yeQembu IV-IV, iwukuphela kwenhlanganisela eqinile ezinzile kuQembu IV le-Periodic Table, I-semiconductor ebalulekile.I-SiC inezinto ezinhle kakhulu ezishisayo, ezomshini, amakhemikhali kanye nezikagesi, eziyenza ibe enye yezinto ezihamba phambili zokwenza amadivaysi e-electronic ashisa kakhulu, ama-high-frequency, namandla aphezulu, i-SiC nayo ingasetshenziswa njenge-substrate material. okwenzelwe i-GaN-based blue light-emitting diode.Njengamanje, i-4H-SiC iwumkhiqizo ojwayelekile emakethe, futhi uhlobo lwe-conductivity luhlukaniswe ngohlobo lwe-semi-insulating kanye nohlobo lwe-N.
Izakhiwo
| Into | 2 intshi 4H N-uhlobo | ||
| Ububanzi | 2inch (50.8mm) | ||
| Ubukhulu | 350+/-25um | ||
| Ukuqondisa | ku-axis 4.0˚ kuya ku-<1120> ± 0.5˚ | ||
| Isisekelo se-Flat Orientation | <1-100> ± 5° | ||
| Ifulethi lesibili Ukuqondisa | 90.0˚ CW kusuka kuPrimary Flat ± 5.0˚, Si Face up | ||
| Ubude Befulethi obuyisisekelo | 16 ± 2.0 | ||
| Ubude Befulethi besibili | 8 ± 2.0 | ||
| Ibanga | Ibanga lokukhiqiza (P) | Ibanga locwaningo (R) | Ibanga le-Dummy (D) |
| Ukungazweli | 0.015~0.028 Ω·cm | <0.1 Ω·cm | <0.1 Ω·cm |
| I-Micropipe Density | ≤ 1 amapayipi amancane/ cm² | ≤ 1 0amapayipi amancane/cm² | ≤ amapayipi amancane angu-30/cm² |
| Ukuqina Kobuso | Sibhekene ne-CMP Ra <0.5nm, C Face Ra <1 nm | N/A, indawo esebenzisekayo > 75% | |
| I-TTV | <8 um | < 10 um | < 15 um |
| Khothama | <±8 um | <±10um | <±15um |
| I-Wap | < 15 um | <20 um | < 25 um |
| Imifantu | Lutho | Ubude obuqongelelwe ≤ 3 mm | Ubude obuqoqiwe ≤10mm, |
| Ukuklwebheka | ≤ 3 imihuzuko, enqwabelanayo | ≤ 5 ukuklwebheka, okunqwabelanayo | ≤ 10 ukuklwebheka, okunqwabelanayo |
| Amapuleti e-Hex | amapuleti aphezulu angu-6, | amapuleti aphezulu ayi-12, | N/A, indawo esebenzisekayo > 75% |
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe ≤ 5% | Indawo eqoqiwe ≤ 10% |
| Ukungcola | Lutho | ||
