I-GaAs Substrate
Incazelo
I-Gallium Arsenide (GaAs) iyiqembu elibalulekile nelivuthiwe le-III-Ⅴ semiconductor eyinhlanganisela, isetshenziswa kabanzi emkhakheni we-optoelectronics kanye ne-microelectronics.Ama-GaA ahlukaniswe kakhulu abe izigaba ezimbili: i-semi-insulating GaAs kanye ne-N-type GaAs.I-semi-insulating GaAs isetshenziswa kakhulu ukwenza amasekethe ahlanganisiwe anezakhiwo ze-MESFET, HEMT kanye ne-HBT, ezisetshenziswa ekuxhumaneni kwe-radar, i-microwave ne-millimeter wave, amakhompyutha anesivinini esiphezulu kanye nokuxhumana nge-fiber optical.Ama-GaAs ohlobo lwe-N asetshenziswa kakhulu ku-LD, i-LED, eduze namalaser e-infrared, ama-laser anamandla aphezulu we-quantum kanye namaseli elanga asebenza kahle kakhulu.
Izakhiwo
| Ikristalu | I-Doped | Uhlobo Lokuqhuba | Ukugxila kokugeleza cm-3 | Ukuminyana cm-2 | Indlela Yokukhula |
| I-GaAs | Lutho | Si | / | <5×105 | I-LEC |
| Si | N | >5×1017 | |||
| Cr | Si | / | |||
| Fe | N | ~2×1018 | |||
| Zn | P | >5×1017 |
Incazelo ye-GaAs Substrate
I-GaAs substrate isho i-substrate eyenziwe ngezinto zekristalu ze-gallium arsenide (GaAs).I-GaAs iyi-semiconductor eyinhlanganisela eyakhiwe izakhi ze-gallium (Ga) kanye ne-arsenic (As).
Ama-substrates e-GaAs avame ukusetshenziswa emkhakheni we-electronics kanye ne-optoelectronics ngenxa yezakhiwo zabo ezinhle kakhulu.Ezinye izici ezibalulekile ze-GaAs substrates zifaka:
1. Ukuhamba kwe-electron ephezulu: I-GaAs inokuhamba kwe-electron ephakeme kunezinye izinto ezivamile ze-semiconductor ezifana ne-silicon (Si).Lesi sici senza i-substrate ye-GaAs ifaneleke kumishini ye-elekthronikhi enamandla kakhulu.
2. Igebe lebhendi eliqondile: Ama-GaA anegebe eliqondile lebhendi, okusho ukuthi ukuphuma kokukhanya okusebenzayo kungenzeka lapho ama-electron nezimbobo kuhlangana kabusha.Lesi sici senza i-GaAs substrates ifanelekele izinhlelo zokusebenza ze-optoelectronic ezifana nama-light emitting diode (ama-LED) namalaser.
3. I-Wide Bandgap: I-GaAs ine-bandgap ebanzi kune-silicon, eyivumela ukuthi isebenze emazingeni okushisa aphezulu.Lesi sakhiwo sivumela amadivayisi asekelwe ku-GaAs ukuthi asebenze kahle kakhulu ezindaweni ezinezinga lokushisa eliphezulu.
4. Umsindo ophansi: Ama-substrates e-GaA abonisa amazinga omsindo aphansi, awenze afanelekele izikhulisa-msindo eziphansi nezinye izinhlelo zokusebenza ze-elekthronikhi ezibucayi.
Ama-GaAs substrates asetshenziswa kakhulu kumadivayisi kagesi nawe-optoelectronic, okuhlanganisa ama-transistors anesivinini esiphezulu, ama-microwave integrated circuits (ICs), amaseli e-photovoltaic, ama-photon detectors, namaseli elanga.
Lawa ma-substrates angalungiswa kusetshenziswa amasu ahlukahlukene njenge-Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) noma Liquid Phase Epitaxy (LPE).Indlela ethile yokukhula esetshenzisiwe incike ekusetshenzisweni okufunayo kanye nezidingo zekhwalithi ze-substrate ye-GaAs.
