I-LiAlO2 Substrate
Incazelo
I-LiAlO2 iyi-substrate ye-crystal yefilimu enhle kakhulu.
Izakhiwo
Isakhiwo sekristalu | M4 |
Iyunithi yeseli engashintshi | a=5.17 A c=6.26 A |
Iphoyinti lokuncibilika (℃) | 1900 |
Ukuminyana (g/cm3) | 2.62 |
Ukuqina (Mho) | 7.5 |
Ukupholisha | Eyodwa noma kabili noma ngaphandle |
I-Crystal Orientation | <100><001> |
Incazelo ye-LiAlO2 Substrate
I-LiAlO2 substrate ibhekisela ku-substrate eyenziwe nge-lithium aluminium oxide (LiAlO2).I-LiAlO2 iyinhlanganisela yekristalu eyingxenye yeqembu lesikhala i-R3m futhi inesakhiwo sekristalu esingunxantathu.
Ama-substrates e-LiAlO2 asetshenziswe ezinhlelweni ezihlukahlukene, okuhlanganisa ukukhula kwefilimu emincane, izendlalelo ze-epitaxial, kanye ne-heterostructures yemishini kagesi, i-optoelectronic, ne-photonic.Ngenxa yezakhiwo zayo ezinhle kakhulu zomzimba namakhemikhali, ifaneleka ngokukhethekile ukuthuthukiswa kwamadivayisi abanzi we-bandgap semiconductor.
Olunye lwezinhlelo zokusebenza eziyinhloko zama-substrates e-LiAlO2 lisensimini yamadivayisi asekelwe ku-Gallium Nitride (GaN) njenge-High Electron Mobility Transistors (HEMTs) kanye ne-Light Emitting Diodes (ama-LED).Ukungafani kwe-lattice phakathi kwe-LiAlO2 ne-GaN kuncane uma kuqhathaniswa, okuyenza ibe i-substrate efanelekile yokukhula kwe-epitaxial yamafilimu amancane e-GaN.I-substrate ye-LiAlO2 ihlinzeka ngesifanekiso sekhwalithi ephezulu sokufakwa kwe-GaN, okuholela ekusebenzeni okuthuthukisiwe kwedivayisi nokuthembeka.
Ama-substrates e-LiAlO2 asetshenziswa nakweminye imikhakha njengokukhula kwezinto ezisebenza ngogesi ze-ferroelectric zamadivayisi enkumbulo, ukuthuthukiswa kwamadivayisi e-piezoelectric, kanye nokwakhiwa kwamabhethri esimo esiqinile.Izakhiwo zabo eziyingqayizivele, ezifana ne-thermal conductivity ephezulu, ukuzinza okuhle kwemishini, kanye ne-dielectric engaguquki, ibanika izinzuzo kulezi zinhlelo zokusebenza.
Kafushane, i-LiAlO2 substrate isho i-substrate eyenziwe nge-lithium aluminium oxide.Ama-substrates e-LiAlO2 asetshenziswa ezinhlelweni ezihlukahlukene, ikakhulukazi ekukhuleni kwamadivayisi asekelwe ku-GaN, kanye nokuthuthukiswa kwamanye amadivaysi kagesi, i-optoelectronic kanye ne-photonic.Banezinto ezibonakalayo ezifiselekayo namakhemikhali ezibenza bafanelekele ukufakwa kwamafilimu amancanyana nama-heterostructures futhi bathuthukise ukusebenza kwedivayisi.