I-LaAlO3 Substrate
Incazelo
LaAlO3Ikristalu eyodwa iyinto ebaluleke kakhulu yezimboni, usayizi omkhulu ophezulu wokushisa ophakeme wefilimu engaphansi kwe-substrate yekristalu eyodwa.Ukukhula ngendlela ye-Czochralski, ama-intshi angu-2 ububanzi kanye nekristalu eyodwa enkulu futhi i-substrate ingatholakala Ilungele ukukhiqizwa kwamadivayisi kagesi we-microwave superconducting ephezulu (njengokuxhumana amabanga amade kuzihlungi ze-microwave ezinezinga eliphezulu lokushisa eliphezulu njll.)
Izakhiwo
Isakhiwo Sekristalu | I-M6 (izinga lokushisa elivamile) | i-M3(>435℃) |
Iyunithi Cell Constant | M6 a=5.357A c=13.22 A | I-M3 a=3.821 A |
I-Melting Point (℃) | 2080 | |
Ukuminyana (g/cm3) | 6.52 | |
Ukuqina (Mho) | 6-6.5 | |
Ukunwetshwa kwe-Thermal | 9.4x10-6/℃ | |
I-Dielectric Constants | ε=21 | |
I-Secant Loss (10ghz) | 3 × 10-4@300k,~0.6×10-4@77k | |
Umbala Nokubukeka | Ukuzala kanye nezimo ziyahluka kusuka kokunsundu kuye kokunsundu | |
Ukuzinza Kwamakhemikhali | Ukushisa kwegumbi akuncibiliki kumaminerali, izinga lokushisa likhulu kuno-150 ℃ ku-h3po4 encibilikayo. | |
Izici | Okwedivayisi ye-electron ye-microwave | |
Indlela Yokukhula | Indlela yeCzochralski | |
Usayizi | 10x3,10x5,10x10,15x15,20x15,20x20, | |
Ф15,Ф20,Ф1″,Ф2″,Ф2.6″ | ||
Ubukhulu | 0.5mm, 1.0mm | |
Ukupholisha | Eyodwa noma kabili | |
I-Crystal Orientation | <100><110><111> | |
Ukunemba kokuqondisa kabusha | ±0.5° | |
Ukuqondisa kabusha umkhawulo | 2° (okukhethekile ku-1°) | |
I-Angle ye-Crystalline | Usayizi okhethekile nokuma kuyatholakala uma uceliwe | |
Ra | ≤5Å (5µm×5µm) | |
Pakisha | Isikhwama esihlanzekile esingu-100, isikhwama esingu-1000 esihlanzekile impela |
I-Low Dielectric Constant's Advantage
Yehlisa ukuhlanekezela kwesignali: Kumasekhethi e-elekthronikhi nezinhlelo zokuxhumana, ukungaguquki kwe-dielectric ephansi kusiza ukunciphisa ukuhlanekezela kwesignali.Izinto ze-Dielectric zingathinta ukusakazwa kwezimpawu zikagesi, kubangele ukulahlekelwa kwesignali nokubambezeleka.Izinto ze-Low-k zinciphisa le miphumela, zivumela ukudluliswa kwesignali okunembe kakhudlwana futhi kuthuthukise ukusebenza kohlelo lonke.
Thuthukisa ukusebenza kahle kwe-insulation: Izinto ze-dielectric zivame ukusetshenziswa njengama-insulators ukuze kuhlukaniswe izingxenye ze-conductive futhi kuvimbele ukuvuza.Izinto ezingaguquki ze-dielectric eziphansi zinikeza ukwahlukanisa okusebenzayo ngokunciphisa amandla alahleka ekuhlanganisweni kwe-electrostatic phakathi kwamakhondaktha aseduze.Lokhu kubangela ukwanda kokusebenza kahle kwamandla kanye nokunciphisa ukusetshenziswa kwamandla kwesistimu kagesi.