Faka i-substrate
Incazelo
I-Ge single crystal iyi-semiconductor enhle kakhulu embonini ye-Infrared ne-IC.
Izakhiwo
| Indlela Yokukhula | Indlela yeCzochralski | ||
| Isakhiwo Sekristalu | M3 | ||
| Iyunithi Cell Constant | a=5.65754 Å | ||
| Ukuminyana (g/cm3） | 5.323 | ||
| I-Melting Point (℃) | 937.4 | ||
| I-Doped Material | Ayikho i-doped | I-Sb-doped | Ngo / Ga –doped |
| Uhlobo | / | N | P |
| Ukungazweli | ＞35Ωcm | 0.05Ωcm | 0.05~0.1Ωcm |
| I-EPD | ＜4×103∕cm2 | ＜4×103∕cm2 | ＜4×103∕cm2 |
| Usayizi | 10x3,10x5,10x10,15x15,20x15,20x20, | ||
| dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm | |||
| Ubukhulu | 0.5mm, 1.0mm | ||
| Ukupholisha | Eyodwa noma kabili | ||
| I-Crystal Orientation | <100>, <110>, <111>, ±0.5º | ||
| Ra | ≤5Å (5µm×5µm) | ||
Incazelo ye-Ge Substrate
I-substrate ye-Ge ibhekisela ku-substrate eyenziwe nge-elementi ye-germanium (Ge).I-Germanium iyimpahla ye-semiconductor enezici ze-elekthronikhi ezihlukile eziyenza ifanelekele izinhlelo zokusebenza ezihlukahlukene ze-electronic kanye ne-optoelectronic.
Ama-Ge substrates avame ukusetshenziswa ekwenzeni izinto zikagesi, ikakhulukazi emkhakheni wobuchwepheshe be-semiconductor.Asetshenziswa njengezinto eziyisisekelo zokufaka amafilimu amancane nezingqimba ze-epitaxial zamanye ama-semiconductors afana ne-silicon (Si).Ama-Ge substrates angasetshenziselwa ukukhulisa ama-heterostructures kanye nezendlalelo ezihlanganisiwe ze-semiconductor ezinezakhiwo ezithile zezinhlelo zokusebenza ezifana nama-transistor anesivinini esikhulu, ama-photodetectors, namaseli elanga.
I-Germanium iphinde isetshenziswe kuma-photonics kanye ne-optoelectronics, lapho ingasetshenziswa khona njenge-substrate yokukhula kwama-infrared (IR) detectors namalensi.Ama-Ge substrates anezakhiwo ezidingekayo ekusetshenzisweni kwe-infrared, njengebanga lokudlulisela elibanzi endaweni emaphakathi ne-infrared kanye nezakhiwo ezinhle kakhulu zemishini emazingeni okushisa aphansi.
Ama-Ge substrates anesakhiwo se-lattice esifaniswe eduze ne-silicon, okuwenza ahambisane ukuze ahlanganiswe nogesi osuselwa ku-Si.Lokhu kuhambisana kuvumela ukwenziwa kwezakhiwo eziyingxubevange kanye nokuthuthukiswa kwemishini ethuthukisiwe kagesi neyezithombe.
Kafushane, i-substrate ye-Ge isho i-substrate eyenziwe nge-germanium, impahla ye-semiconductor esetshenziswa ezinhlelweni zikagesi kanye ne-optoelectronic.Isebenza njengenkundla yokukhula kwezinye izinto zokwakha ze-semiconductor, ivumela ukwakhiwa kwamadivayisi ahlukahlukene emkhakheni we-electronics, optoelectronics kanye ne-photonics.
